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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/57526

Title: Nitrogen assisted etching of graphene layers in a scanning electron microscope
Author: O'NEILL, ARLENE
FOX, DANIEL
ZHANG, HONGZHOU
COLEMAN, JONATHAN NESBIT
Sponsor: 
Name Grant Number
07/SK/I1220a

Author's Homepage: http://people.tcd.ie/colemaj
http://people.tcd.ie/oneillar
http://people.tcd.ie/foxd6
http://people.tcd.ie/hozhang
Keywords: Condensed matter physics
Graphene
Issue Date: 2011
Citation: Fox, D, O'Neill, A, Zhou, D, Boese, M, Coleman, JN, Zhang, HZ, Nitrogen assisted etching of graphene layers in a scanning electron microscope, Applied Physics Letters, 98, 24, 2011, 243117
Series/Report no.: Applied Physics Letters
98
24
Abstract: We describe the controlled patterning of nanopores in graphene layers by using the low-energy (<10 keV) focused electron beam in a scanning electron microscope. Regular nanometer-sized holes can be fabricated with the presence of nitrogen gas. The effect of the gas pressure, beam current, and energy on the etching process are investigated. Transmission electron microscopy, coupled with plasmon energy loss imaging, reveals the microstructure modification of the etched graphene. A nitrogen-ion assisted etching mechanism is proposed for the controlled patterning.
Description: PUBLISHED
URI: http://hdl.handle.net/2262/57526
Appears in Collections:Physics (Scholarly Publications)

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