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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/55979

Title: Reliable processing of graphene using metal etchmasks
Author: KUMAR, SHISHIR
DUESBERG, GEORG STEFAN
Sponsor: 
Name Grant Number
08/CE/I1432

Author's Homepage: http://people.tcd.ie/duesberg
Keywords: Physical chemistry
Graphene
Thin films
Issue Date: 2011
Publisher: Springer
Citation: Shishir Kumar, Nikos Peltekis, Kangho Lee, Hye-Young Kim and Georg Stefan Duesberg, Reliable processing of graphene using metal etchmasks, Nanoscale Research Letters, 6, 390, 2011
Series/Report no.: Nanoscale Research Letters;
6;
390;
Abstract: Graphene exhibits exciting properties which make it an appealing candidate for use in electronic devices. Reliable processes for device fabrication are crucial prerequisites for this. We developed a large area of CVD synthesis and transfer of graphene films. With patterning of these graphene layers using standard photoresist masks, we are able to produce arrays of gated graphene devices with four point contacts. The etching and lift off process poses problems because of delamination and contamination due to polymer residues when using standard resists. We introduce a metal etch mask which minimises these problems. The high quality of graphene is shown by Raman and XPS spectroscopy as well as electrical measurements. The process is of high value for applications, as it improves the processability of graphene using high-throughput lithography and etching techniques.
Description: PUBLISHED
URI: http://hdl.handle.net/2262/55979
Related links: http://www.nanoscalereslett.com/content/6/1/390
Appears in Collections:Chemistry (Scholarly Publications)

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