Condensed matter physics chemical vapour deposition
American Institute of Physics
Wasyluk, J., Perova, T.S., Meyer, F., Raman and Fourier transform infrared study of substitutional carbon incorporation in rapid thermal chemical vapor deposited Si 1-x-yGexCy on (1 0 0) Si, Journal of Applied Physics, 107, 2, 2010, 023518
Journal of Applied Physics; 107; 2;
We report on a detailed study of the dependence of the vibrational modes in rapid thermal chemical
vapor deposited Si1−x−yGexCy films on the substitutional carbon concentration. Si1−x−yGexCy films
were investigated using Raman and infrared spectroscopy with x varying in the range of 10%–16%
and y in the range of 0%–1.8%. The introduction of C into thin SiGe layers reduces the average
lattice constant. It has been shown that the integrated infrared intensity of the Si–C peak and the
ratio of both the Raman integrated and peak intensities of the Si–C peak at 605 cm−1 to the
Si–Si peak of SiGeC layer, increase linearly with C content and are independent of the Ge content.
This leads to the conclusion that infrared absorption and Raman scattering data can be used to
determine the fraction of substitutional carbon content in Si1−x−yGexCy layers with a Ge content of
up to 16%. It is also shown that the intensity ratio of the carbon satellite peak to the local carbon
mode increases linearly with C content up to a C level of 1.8%. This confirms a conclusion of an
increase in the probability of creating third-nearest-neighbor pairs with increasing carbon content, as
derived from theoretical calculations
Please note: There is a known bug in some browsers that causes an
error when a user tries to view large pdf file within the browser window.
If you receive the message "The file is damaged and could not be
repaired", please try one of the solutions linked below based on the
browser you are using.
Items in TARA are protected by copyright, with all rights reserved, unless otherwise indicated.