Chun, BS, Wu, HC, Abid, M, Chu, IC, Serrano-Guisan, S, Shvets, IV, Choi, DS, The effect of deposition power on the electrical properties of Al-doped zinc oxide thin films, APPLIED PHYSICS LETTERS, 97, 8, 082109, 2010
Series/Report no.:
APPLIED PHYSICS LETTERS 97 8, 082109
Abstract:
We investigated the effect on the electronic properties of aluminum (Al)-zinc oxide (ZnO) films by modulating the radio frequency sputtering power. Our experimental results show that increasing the sputtering power increases the Al doping concentration, decreases the resistivity, and also shifts the Zn 2p and O 1s to higher binding energy states. Our local-density approximation (LDA) and LDA+U calculations show that the shift in higher binding energy and resistivity decrease are due to an enhancement of the O 2p-Zn 3d coupling and the modification of the Zn 4s-O 2p interaction in ZnO induced by Al doping.
Please note: There is a known bug in some browsers that causes an
error when a user tries to view large pdf file within the browser window.
If you receive the message "The file is damaged and could not be
repaired", please try one of the solutions linked below based on the
browser you are using.
Items in TARA are protected by copyright, with all rights reserved, unless otherwise indicated.
