Atomic, molecular and chemical physics antiferromagnetic
American Institute of Physics
C. Fowley, B. S. Chun, H. C. Wu, M. Abid, J. U. Cho, S. J. Noh, Y. K. Kim. I. V. Shvets, J. M. D. Coey, Inverted magnetoresistance in dual spin valve structures with a synthetic antiferromagnetic free layer, Applied Physics Letters, 95, 22, 2009, 222506-
Applied Physics Letters; 95; 22;
We report an oscillation of the giant magnetoresistance GMR ratio as a function of Ru layer
thickness in the CoFe/Cu/ CoFe/Ru/CoFe SAF/Cu/CoFe/IrMn dual spin valve SV structure. A
normal GMR with a positive sign is observed for the thickness of Ru providing a ferromagnetic
interlayer exchange coupling IEC . The inverted GMR is observed for the thickness of Ru
providing an antiferromagnetic IEC, which is consistent with IEC period across the Ru spacer as
well as the electrical separation of the overall structure into two SVs connected in parallel.
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