Atomic, molecular and chemical physics Magnetization switching
American Institute of Physics
Feng, J.F., Diao, Z., Feng, G., Nowak, E.R., Coey, J.M.D. , Magnetic noise in MgO-based magnetic tunnel junction rings , Applied Physics Letters, 96, 5, 2010, art. no. 052504
Applied Physics Letters; 96; 5;
Magnetization switching is investigated in ring-shaped MgO-based magnetic tunnel junctions with
168% tunneling magnetoresistance. Besides the forward and reverse onion states, two vortex
states and several metastable states are observed for the ferromagnetic free layer. Electrical noise
is used to characterize the low frequency magnetization dynamics; a stationary 1/ f noise spectrum
is observed within each magnetic state but they are separated by noise peaks which show a
1/ f2 spectrum that is associated with slow random telegraph fluctuations. In the 1/ f region,
the normalized magnetic noise parameter, mag, is shown to be consistent with the
Please note: There is a known bug in some browsers that causes an
error when a user tries to view large pdf file within the browser window.
If you receive the message "The file is damaged and could not be
repaired", please try one of the solutions linked below based on the
browser you are using.
Items in TARA are protected by copyright, with all rights reserved, unless otherwise indicated.