Dependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110)
Citation:
McLean, A.B., McGovern, I.T., Stephens, C., Wilke, W.G., Haak, H., Horn, K., Braun, W., Dependence of core-level photoemission spectra on overlayer growth mode: Al on InP(110) , Physical Review B, 38, 9, 1988, 6330-6333Download Item:
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Abstract:
The adsorption of Al overlayers on the clean, cleaved InP(110) surface has been studied, with the InP substrates at room and low (120 K) temperatures, using synchrotron radiation excited soft-x-ray photoemission spectroscopy. This interface exhibits a well-documented exchange reaction at room temperature, and a visual comparison of the spectra taken at 300 and 120 K suggests that this reaction is inhibited at 120 K. However, there are also significant changes in the interface growth mode as the temperature is lowered. The reacted indium feature exhibits a coverage-dependent binding energy, so that its spectral weight is obscured by overlap with the bulk indium feature. Moreover, escape-depth considerations invalidate a simple comparison of reactivity at the two temperatures.
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Author: MC GOVERN, IGNATIUS
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Physical Review B;38;
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