Proctor JE, Gregoryanz E, Novoselov KS, Lotya M, Coleman JN, Halsall MP, High-pressure Raman spectroscopy of graphene, Physical Review B, 80, 7, 2009, 073408
Physical Review B 80 7
In situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene
samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene
adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of
graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell
to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our
results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.
Please note: There is a known bug in some browsers that causes an
error when a user tries to view large pdf file within the browser window.
If you receive the message "The file is damaged and could not be
repaired", please try one of the solutions linked below based on the
browser you are using.
Items in TARA are protected by copyright, with all rights reserved, unless otherwise indicated.