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Title: High-pressure Raman spectroscopy of graphene
Author's Homepage:
Keywords: Physics
Issue Date: 2009
Citation: Proctor JE, Gregoryanz E, Novoselov KS, Lotya M, Coleman JN, Halsall MP, High-pressure Raman spectroscopy of graphene, Physical Review B, 80, 7, 2009, 073408
Series/Report no.: Physical Review B
Abstract: In situ high-pressure Raman spectroscopy is used to study monolayer, bilayer, and few-layer graphene samples supported on silicon in a diamond anvil cell to 3.5 GPa. The results show that monolayer graphene adheres to the silicon substrate under compressive stress. A clear trend in this behavior as a function of graphene sample thickness is observed. We also study unsupported graphene samples in a diamond anvil cell to 8 GPa and show that the properties of graphene under compression are intrinsically similar to graphite. Our results demonstrate the differing effects of uniaxial and biaxial strain on the electronic band structure.
Description: PUBLISHED
Appears in Collections:Physics (Scholarly Publications)

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