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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/38810

Title: Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wells
Author: HEGARTY, JOHN
Author's Homepage: http://people.tcd.ie/jhegarty
Keywords: Physics
Issue Date: 1993
Citation: M. H. Moloney and J. Hegarty, L. Buydens and P. Demeester, R. Grey and J. Woodhead, Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wells, Applied Physics Letters, 62, 25, 1993, 3327 - 3329
Series/Report no.: Applied Physics Letters
62
25
Abstract: The etfect of strain, strain relief, and barrier design on the carrier lifetime in InGaAs/(Al)GaAs multiple-quantum-well samples is investigated. Carriers lifetimes are measured in samples with varying amount of strain, due to increasing indium concentration in the wells, as well as in samples subject to strain relief, with thick barriers and GaAs barriers. Lifetimes of the order of 0.5 ns are measured. The lifetime is sensitive to the presence of indium in the wells but remarkably insensitive to the indium concentration, the strain in the samples, and the barrier composition.
Description: PUBLISHED
URI: http://hdl.handle.net/2262/38810
Related links: http://dx.doi.org/10.1063/1.109060
Appears in Collections:Administrative Staff Authors (Scholarly Publications)

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