C. Jordan, J. F. Donegan, J. Hegarty, B. J. Roycroft, S. Taniguchi, T. Hino, E. Kato, N. Noguchi, and A. Ishibashi, Carrier-density dependence of the photoluminescence lifetimes in ZnCdSe/ZnSSe quantum wells at room temperature, Applied Physics Letters, 74, 1999, 3359 - 3361
Applied Physics Letters 74
Photoluminescence lifetimes have been measured at room temperature as a function of carrier
density in ZnCdSe/ZnSSe quantum wells. We show that, at low carrier density (53109–5
31010 cm22), nonradiative recombination dominates, while radiative recombination becomes more
dominant as the carrier density is increased from 531010 to 531011 cm22. Above ;5
31011 cm22, band filling effects are shown to produce a saturation of the lifetimes. A simple rate
equation model approach can be used to describe the carrier density dependence of the
photoluminescence decay data obtained on a wide range of samples. A representative band-to-band
recombination coefficient of 831024 cm2 s21 and a Shockley–Read–Hall rate of 7.33107 s21 were
determined for one of the better samples studied. We believe that the excellent quality of our
samples has allowed for the radiative recombination coefficient to be characterized accurately at
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