Brys, C.; Vermaerke, F.; Demeester, P.; van Daele, P.; Rakennus, K.; Salokatve, A.; Uusimaa, P.; Pessa, M.; Bradley, A. L.; Doran, J. P.; O'Gorman, J.; Hegarty, J., Epitaxial lift-off of ZnSe based II-VI structures, Applied Physics Letters, 66, 9, 1995, 1086, 1088
Applied Physics Letters 66 9
The epitaxial lift-off technique is applied to II–VI based structures. Epilayers of 255 nm thickness
containing quantum wells are lifted off their substrates and redeposited onto polyimide coated
GaAs. The technique has also been applied to II–VI samples onto which dielectric films had been
deposited. Photoluminescence measurements show that the material quality has not been degraded
during the processing. The success of this technique with II–VI’s opens up many possibilities for the
integration of these materials with metals and dielectrics in vertical structure devices
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