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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/38426

Title: Epitaxial lift-off of ZnSe based II-VI structures
Author: BRADLEY, LOUISE
HEGARTY, JOHN
Author's Homepage: http://people.tcd.ie/bradlel
http://people.tcd.ie/jhegarty
Keywords: Physics
Issue Date: 1995
Citation: Brys, C.; Vermaerke, F.; Demeester, P.; van Daele, P.; Rakennus, K.; Salokatve, A.; Uusimaa, P.; Pessa, M.; Bradley, A. L.; Doran, J. P.; O'Gorman, J.; Hegarty, J., Epitaxial lift-off of ZnSe based II-VI structures, Applied Physics Letters, 66, 9, 1995, 1086, 1088
Series/Report no.: Applied Physics Letters
66
9
Abstract: The epitaxial lift-off technique is applied to II–VI based structures. Epilayers of 255 nm thickness containing quantum wells are lifted off their substrates and redeposited onto polyimide coated GaAs. The technique has also been applied to II–VI samples onto which dielectric films had been deposited. Photoluminescence measurements show that the material quality has not been degraded during the processing. The success of this technique with II–VI’s opens up many possibilities for the integration of these materials with metals and dielectrics in vertical structure devices
Description: PUBLISHED
URI: http://hdl.handle.net/2262/38426
Related links: http://dx.doi.org/10.1063/1.113580
Appears in Collections:Physics (Scholarly Publications)

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