II- VI semiconductors quantum wells excitons photoluminescence linewidth
John P. Doran; Fred P. Logue; T. Miyajima; Ross P. Stanley; John F. Donegan; John Hegarty, Engineering the exciton linewidth in II-VI quantum well structures, Optical Engineering, 33, 1994, p3921 - 3925
Optical Engineering 33
The excitonic transition in Il-VI quantum well materials has
recently been used as the basis for optical modulators and also as the
lasing transition at low temperatures. The central aspect in the use of
the exciton resonance in optical devices is the understanding of the exciton
linewidth. We present a detailed study of the interactions that affect
the linewidth in Il-VI semiconductor quantum well materials. The broadening
of the resonance with increasing temperature can be controlled by
altering the material parameters of the Il-VI structures. In so doing the
exciton binding energy can exceed the LO-phonon energy and thereby
reduce the homogeneous contribution to the measured linewidth. Efforts
to reduce well-width fluctuations in the growth of the Il-VI quantum well
structures, which are responsible for the inhomogeneous linewidth, must
also be made to a limit where the room temperature Iinewidth is narrow
and homogeneously broadened.
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