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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/37606

Title: Engineering the exciton linewidth in II-VI quantum well structures
Author: DONEGAN, JOHN FRANCIS
HEGARTY, JOHN
Author's Homepage: http://people.tcd.ie/jdonegan
http://people.tcd.ie/jhegarty
Keywords: II- VI semiconductors
quantum wells
excitons
photoluminescence
linewidth
Issue Date: 1994
Publisher: SPIE
Citation: John P. Doran; Fred P. Logue; T. Miyajima; Ross P. Stanley; John F. Donegan; John Hegarty, Engineering the exciton linewidth in II-VI quantum well structures, Optical Engineering, 33, 1994, p3921 - 3925
Series/Report no.: Optical Engineering
33
Abstract: The excitonic transition in Il-VI quantum well materials has recently been used as the basis for optical modulators and also as the lasing transition at low temperatures. The central aspect in the use of the exciton resonance in optical devices is the understanding of the exciton linewidth. We present a detailed study of the interactions that affect the linewidth in Il-VI semiconductor quantum well materials. The broadening of the resonance with increasing temperature can be controlled by altering the material parameters of the Il-VI structures. In so doing the exciton binding energy can exceed the LO-phonon energy and thereby reduce the homogeneous contribution to the measured linewidth. Efforts to reduce well-width fluctuations in the growth of the Il-VI quantum well structures, which are responsible for the inhomogeneous linewidth, must also be made to a limit where the room temperature Iinewidth is narrow and homogeneously broadened.
Description: PUBLISHED
URI: http://dx.doi.org/10.1117/12.186842
http://hdl.handle.net/2262/37606
Appears in Collections:Physics (Scholarly Publications)

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