Jordan, C.; Fewer, D. T.; Donegan, J. F.; McCabe, E. M.; Huynh, A.; Logue, F. P.; Taniguchi, S.; Hino, T.; Nakano, K.; Ishibashi, A., Defect annealing in a II-VI laser diode structure under intense optical excitation, Applied Physical Letters, 72, 2, 1998, 194, 196
Applied Physical Letters 72 2
Defect annealing under intense pulsed optical excitation has been observed in a II–VI laser diode
structure at room temperature. More than one order of magnitude increase in photoluminescence
intensity has been obtained when the annealed area is probed at low excitation intensity.
High-resolution confocal photoluminescence images of the annealed region do not show any sign of
degradation. Together, these results suggest that an initial density of intrinsic point defects present
within the active region can be removed by the optical annealing. Recombination-enhanced defect
reactions in the vicinity of the point defects are responsible for this nonthermal annealing effect.
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