J. Wasyluk, T.S. Perova, S.A. Kukushkin, A.V. Osipov, N.A. Feoktistov, S.A. Grudinkin, Raman investigation of different polytypes in SiC thin films grown by solid-gas phase epitaxy on Si (111) and 6H-SiC substrates, Materials Science Forum, 645-648, 2010, 359 - 362
Materials Science Forum 645-648
Raman spectroscopy was applied to investigate a series of SiC films grown on Si and 6HSiC
substrates by a new method of solid gas phase epitaxy. During the growth characteristic voids
are formed in Si at the SiC/Si interface. Raman peak position, intensity and linewidth were used to
characterize the quality and the polytype structure of the SiC layers. A large enhancement in the
peak intensity of the transverse optical and longitudinal optical phonon modes of SiC is observed
for the Raman signal measured at the voids. In addition, scanning electron microscopy and atomic
force microscopy were used to investigate the surface morphology of SiC layers.
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