Yan Zhou, Ho-Kei Chan, Chi-Hang Lam & Franklin G. Shin, Effects of Polarization and Permittivity Gradients and Other Parameters on the Anomalous Vertical Shift Behaviour of Graded Ferroelectric Thin Films, Journal of Applied Physics, 98, 3, 2005, 034105-1 - 034105-6
Journal of Applied Physics 98 3
We studied theoretically the dependence of the “polarization offset” on various parameters in
compositionally graded ferroelectric thin films. Our model adopts the Landau-Khalatnikov equation
to describe hysteresis behavior and takes the time-dependent space-charge-limited conductivity into
account to investigate the effects of polarization and permittivity gradients, charge mobilities, and
thickness in graded ferroelectric thin films. We found that both polarization and permittivity
gradients are requisite for the occurrence of offset phenomena. It is also found that larger gradients
of remanent polarization and permittivity, a smaller thickness, and a larger charge mobility can
generally enhance the effect of vertical offsets. The qualitative agreement between simulation and
experiment further supports our previous notion that the asymmetric conduction current arising as
a result of the composition gradient is an important factor leading to the polarization offset
PUBLISHED Numerical results from the time-dependent space-charge-limited conduction model developed earlier suggests that both polarization- and permittivity-gradients are necessary for the occurrence of polarization offsets in compositionally graded ferroelectric films.
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