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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/33469

Title: Temperature dependence of inverted tunneling magnetoresistance in MGO-based magnetic tunnel junctions
Author: COEY, JOHN MICHAEL DAVID
FENG, JIA-FENG
Sponsor: Science Foundation Ireland
Author's Homepage: http://people.tcd.ie/jcoey
http://people.tcd.ie/jfeng
Keywords: Magnetic tunnel junction (MTJ); Tunneling magnetoresistance (TMR); Temperature dependence
Issue Date: 2010
Citation: J.F. Feng, Gen Feng, Q.L. Ma, X.F. Han and J.M.D. Coey, Temperature dependence of inverted tunneling magnetoresistance in MGO-based magnetic tunnel junctions, Journal of Magnetism and Magnetic Materials, 322, 9-12, 2010, 1446-1448
Series/Report no.: Journal of Magnetism and Magnetic Materials
322
9-12
Abstract: MgO-based magnetic tunnel junctions (MTJs) of the following main structure: Ir22Mn78 (10 nm) /Co90Fe10 (2 nm) /Ru (0.85 nm) /CoFeB (0.5t<2 nm) /MgO (2.5 nm) /CoFeB (3 nm) have been fabricated, with a thin CoFeB layer in the pinned synthetic antiferromagnetic CoFe/Ru/CoFeB stack. These MgO-based MTJs are of good barrier quality. Inverted tunneling magnetoresistance (TMR) has been observed for these MTJs, and the temperature (T) dependence of the inverted TMR are discussed in this work. The inverted TMR ratios are −33% at room temperature (RT) and extrapolated to −84% at 0 K for MTJs with t=1.0 nm, after annealing at 300 °C. In this case, the TMR ratio at low temperature is more than double that of room temperature. Furthermore, the TMR ratio at low T is 3.8 times larger than that of 300 K for MTJs with t=0.5 nm, after annealing at 250 °C. These results may be useful for spin electronic devices.
Description: PUBLISHED
URI: http://dx.doi.org/10.1016/j.jmmm.2009.04.072
http://hdl.handle.net/2262/33469
Appears in Collections:Physics (Scholarly Publications)

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