Magnetic tunnel junction; Tunneling magnetoresistance; MgO barrier
Issue Date:
2010
Citation:
G. Feng, J.F. Feng and J.M.D. Coey, The effect of magnetic annealing on barrier asymmetry in Co40Fe40B20/MgO magnetic tunnel junctions, Journal of Magnetism and Magnetic Materials, 322, 9-12, 2010, 1456-1459
Series/Report no.:
Journal of Magnetism and Magnetic Materials 322 9-12
Abstract:
We demonstrate that high-quality magnetic tunnel junctions with Co40Fe40B20 electrodes and crystalline MgO barriers, which show a 230% tunneling magnetoresistance ratio at room temperature, can be successfully fabricated by using a target-facing-target sputtering technique and present the results on the change of barrier asymmetry after the annealing at different temperatures. Bias voltage dependence of magnetoresistance ratio for Co40Fe40B20/MgO magnetic tunnel junctions is highly asymmetrical in the as-deposited states and becomes more symmetrical after magnetic annealing. It also exhibits a shift of the tunneling magnetoresistance maximum to a positive bias voltage under the low-temperature annealing.
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