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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/33466

Title: Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions
Author: FENG, GEN
FENG, JIA-FENG
COEY, JOHN MICHAEL DAVID
Sponsor: Science Foundation Ireland
Author's Homepage: http://people.tcd.ie/jcoey
Keywords: Magnetic tunnel junction (MTJ); Tunneling magnetoresistance (TMR); Bias dependence
Issue Date: 2009
Publisher: Elsevier
Citation: Feng, J.F., Feng, G., Ma, Q.L., Han, X.F., Coey, J.M.D. Bias voltage dependence of inverted magnetoresistance on the annealing temperature in MgO-based magnetic tunnel junctions in Journal of Magnetism and Magnetic Materials, 321, (19), 2009, pp 3046-3048
Series/Report no.: Journal of Magnetism and Magnetic Materials
321
19
Abstract: MgO-based magnetic tunnel junctions (MTJs) with a layer sequence Ir22Mn78 or Fe50Mn50 (10 nm)/CoFe (2 nm)/Ru (0.85 nm)/CoFeB (0.5t<2 nm)/MgO (2.5 nm)/CoFeB (3 nm) have been fabricated. The bias voltage dependence of tunneling magnetoresistance (TMR) is given as a function of the annealing temperature for these MTJs, which shows the TMR ratio changes its sign from inverted to normal at a critical bias voltage (VC) when an unbalanced synthetic antiferromagnetic stack CoFe/Ru/CoFeB is used. VCs change with the thickness of the pinned CoFeB and annealing temperature, which implies one can achieve different VCs by artificial control. The asymmetric VC values suggest that a strong density-of-states modification occurs at bottom oxide/ferromagnet interface.
Description: PUBLISHED
URI: http://dx.doi.org/10.1016/j.jmmm.2009.04.069
http://hdl.handle.net/2262/33466
Appears in Collections:Physics (Scholarly Publications)

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