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Title: Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer
Sponsor: Science Foundation Ireland
Author's Homepage:
Keywords: Magnetic tunnel junctions (MTJs); Inverted and normal tunneling magnetoresistance (TMR); Elemental diffusion
Issue Date: 2010
Citation: Q.L. Ma, J.F. Feng, Gen Feng, K. Oguz, X.F. Han and J.M.D. Coey, Annealing effect on tunneling magnetoresistance in MgO-based magnetic tunnel junctions with FeMn exchange-bias layer, Journal of Magnetism and Magnetic Materials, 322, 1, 2010, 108-111
Series/Report no.: Journal of Magnetism and Magnetic Materials
Abstract: MgO-based magnetic tunnel junctions were fabricated, with a thin pinned CoFeB layer in the unbalanced synthetic antiferromagnet part of the stack FeMn/CoFe/Ru/CoFeB. Inverted and normal tunneling magnetoresistance (TMR) values occur at low and high annealing temperatures (Ta), respectively. The TMR ratio remains inverted up to Ta=300 °C and it becomes normal around Ta=350 °C. The exchange bias of FeMn disappears at high Ta. The sign reversal of the TMR ratio is mainly attributed to the disappearance of the exchange bias due to manganese diffusion during the annealing process.
Description: PUBLISHED
Appears in Collections:Physics (Scholarly Publications)

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