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Title: Design of low V-pi high-speed GaAs travelling-wave electrooptic phase modulators using an n-i-p-n structure
Sponsor: Science Foundation Ireland
Author's Homepage:
Keywords: Electrooptic modulator, Padé approximation transform, 2-D finite-difference time-domain (FDTD) method, traveling-wave (TW) electrodes.
Issue Date: 2008
Publisher: IEEE
Citation: Qiaoyin Lu Weihua Guo Byrne, D. Donegan, J.F. ‘Design of low V-pi high-speed GaAs travelling-wave electrooptic phase modulators using an n-i-p-n structure’ in IEEE Photonics Technology Letters, 20, (21), 2008, pp 1805-1807
Series/Report no.: IEEE Photonics Technology Letters
Abstract: GaAs-based electrooptic phase modulators using an n-i-p-n structure and coplanar waveguide traveling-wave electrodes are designed using the compact 2-D finite-difference time-domain technique and Padé approximation transform. By optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V are predicted for a 5-mm-long modulator.
Description: PUBLISHED
Appears in Collections:Physics (Scholarly Publications)

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