Qiaoyin Lu Weihua Guo Byrne, D. Donegan, J.F. ‘Design of low V-pi high-speed GaAs travelling-wave electrooptic phase modulators using an n-i-p-n structure’ in IEEE Photonics Technology Letters, 20, (21), 2008, pp 1805-1807
IEEE Photonics Technology Letters 20 21
GaAs-based electrooptic phase modulators using
an n-i-p-n structure and coplanar waveguide traveling-wave
electrodes are designed using the compact 2-D finite-difference
time-domain technique and Padé approximation transform. By
optimization, an electrical 3-dB bandwidth of 40 GHz and a 6.6-V
are predicted for a 5-mm-long modulator.
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