Discretely Tunable Semiconductor Lasers Suitable for Photonic Integration
Citation:
Byrne DC, Engelstaedter JP, Guo WH, et al, Discretely Tunable Semiconductor Lasers Suitable for Photonic Integration, IEEE Journal of Selected Topics in Quantum Electronics,, 15, 3, 2009, 482-487Download Item:
Discretely Tunable.pdf (published (publisher copy) peer-reviewed) 447.7Kb
Abstract:
Abstract?A sequence of partially reflective slots etched into an
active ridge waveguide of a 1.5 ?m laser structure is found to
provide sufficient reflection for lasing. Mirrors based on these reflectors
have strong spectral dependence. Two such active mirrors
together with an active central section are combined in a Vernier
configuration to demonstrate a tunable laser exhibiting 11 discrete
modes over a 30 nm tuning range with mode spacing around
400 GHz and side-mode suppression ratio larger than 30 dB. The
individual modes can be continuously tuned by up to 1.1 nm by
carrier injection and by over 2 nm using thermal effects. These
mirrors are suitable as a platform for integration of other optical
functions with the laser. This is demonstrated by monolithically
integrating a semiconductor optical amplifier with the laser resulting
in a maximum channel power of 14.2 dBm from the discrete
modes.
Author's Homepage:
http://people.tcd.ie/jdoneganhttp://people.tcd.ie/guow
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PUBLISHEDType of material:
Journal ArticleCollections:
Series/Report no:
IEEE Journal of Selected Topics in Quantum Electronics,15
3
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Terms?Photonic integration, semiconductor lasers, semiconductor optical amplifiers, tunable lasers.DOI:
http://dx.doi.org/10.1109/JSTQE.2009.2016981Licences: