J. Scola, H Polovy, C. Fermon, M. Pannetier-Lecoeur, G. Feng, K. Fahy and J. M. D. Coey 'Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes; influence of annealing temperature' in Applied Physics Letters, 90, (25), 2007, 252501
Applied Physics Letters 90 25
Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and
magnetoresistance values up to 235%. The authors investigated the noise for different degrees of
crystallization and CoFeB/MgO interface quality depending on the annealing temperature. The
authors report an extremely low 1/ f noise, compared to magnetic junctions with Al2O3 barriers.
The origin of the low frequency noise is discussed and it is attributed to localized charge traps with
the MgO barriers.
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