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Title: Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes; influence of annealing temperature
Author: FENG, GEN
Author's Homepage:
Keywords: Physics
Issue Date: 2007
Publisher: American Institute of Physics
Citation: J. Scola, H Polovy, C. Fermon, M. Pannetier-Lecoeur, G. Feng, K. Fahy and J. M. D. Coey 'Noise in MgO barrier magnetic tunnel junctions with CoFeB electrodes; influence of annealing temperature' in Applied Physics Letters, 90, (25), 2007, 252501
Series/Report no.: Applied Physics Letters
Abstract: Low frequency noise has been measured in magnetic tunnel junctions with MgO barriers and magnetoresistance values up to 235%. The authors investigated the noise for different degrees of crystallization and CoFeB/MgO interface quality depending on the annealing temperature. The authors report an extremely low 1/ f noise, compared to magnetic junctions with Al2O3 barriers. The origin of the low frequency noise is discussed and it is attributed to localized charge traps with the MgO barriers.
Description: PUBLISHED
Appears in Collections:Physics (Scholarly Publications)

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