Please use this identifier to cite or link to this item:
http://hdl.handle.net/2262/31890
Title:
Influence of annealing on the bias voltage dependence of tunnelling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes
G Feng, S van Dijken and J.M.D. Coey 'Influence of annealing on the bias voltage dependence of tunnelling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes' in Applied Physics Letters, 89, (16), 2006, 162501
Series/Report no.:
Applied Physics Letters 89 16
Abstract:
Double-barrier magnetic tunnel junctions with two MgO barriers and three CoFeB layers exhibiting tunneling magnetoresistance (TMR) values of more than 100% were fabricated. The bias voltage dependence of the TMR ratio is highly asymmetric after annealing at low temperatures, indicating dissimilar CoFeB/MgO interfaces. The TMR effect decays very slowly for positive bias and is only reduced to half of its maximum value at V1/2 = 1.88 V when the junctions are processed at 200 °C. The largest output voltage, 0.62 V, is obtained after annealing at 300 °C, a temperature that combines high TMR ratios with a considerable asymmetric bias dependence.
Please note: There is a known bug in some browsers that causes an
error when a user tries to view large pdf file within the browser window.
If you receive the message "The file is damaged and could not be
repaired", please try one of the solutions linked below based on the
browser you are using.
Items in TARA are protected by copyright, with all rights reserved, unless otherwise indicated.
