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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/31890

Title: Influence of annealing on the bias voltage dependence of tunnelling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes
Author: FENG, GEN
VAN DIJKEN, SEBASTIAN
COEY, JOHN MICHAEL DAVID
Sponsor: Science Foundation Ireland
Author's Homepage: http://people.tcd.ie/jcoey
Keywords: Physics
Issue Date: 2006
Publisher: American Institute of Physics
Citation: G Feng, S van Dijken and J.M.D. Coey 'Influence of annealing on the bias voltage dependence of tunnelling magnetoresistance in MgO double-barrier magnetic tunnel junctions with CoFeB electrodes' in Applied Physics Letters, 89, (16), 2006, 162501
Series/Report no.: Applied Physics Letters
89
16
Abstract: Double-barrier magnetic tunnel junctions with two MgO barriers and three CoFeB layers exhibiting tunneling magnetoresistance (TMR) values of more than 100% were fabricated. The bias voltage dependence of the TMR ratio is highly asymmetric after annealing at low temperatures, indicating dissimilar CoFeB/MgO interfaces. The TMR effect decays very slowly for positive bias and is only reduced to half of its maximum value at V1/2 = 1.88 V when the junctions are processed at 200 °C. The largest output voltage, 0.62 V, is obtained after annealing at 300 °C, a temperature that combines high TMR ratios with a considerable asymmetric bias dependence.
Description: PUBLISHED
URI: http://dx.doi.org/10.1063/1.2362977
http://hdl.handle.net/2262/31890
Appears in Collections:Physics (Scholarly Publications)

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