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Please use this identifier to cite or link to this item: http://hdl.handle.net/2262/31852

Title: Magnetoresistance in magnetic tunnel junctions with amorphous electrodes
Author: FENG, GEN
COEY, JOHN MICHAEL DAVID
Sponsor: Science Foundation Ireland
Author's Homepage: http://people.tcd.ie/jcoey
Keywords: Amorphous, MTJ, spin-dependent tunneling.
Issue Date: 2005
Publisher: IEEE
Citation: Nakajima K, Feng G, Coey JMD in 'Magnetoresistance in magnetic tunnel junctions with amorphous electrodes' in IEEE Transactions on Magnetics, 41, (10), 2005, pp 2609 - 2611
Series/Report no.: IEEE Transactions on Magnetics
41
10
Abstract: Magnetic tunnel junctions (MTJs) with amorphous CoFeB and Co2MnSi electrodes were fabricated and examined. In the case of [Co90Fe10]100 B , the = 32%boron addition reduces the magnetization by 30% compared to Co90Fe10, yet the reduction of the tunnel magnetoresistance (TMR) is over 95%. On the contrary, in the case of Co(100 )Mn Si , although net magnetization is very small at room temperature, the TMR can be as large as 7%. The character of each metalloid (boron and silicon) could be responsible for the peculiar behavior to each system.
Description: PUBLISHED
URI: http://dx.doi.org/10.1109/TMAG.2005.854717
http://hdl.handle.net/2262/31852
Appears in Collections:Physics (Scholarly Publications)

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