Nakajima K, Feng G, Coey JMD in 'Magnetoresistance in magnetic tunnel junctions with amorphous electrodes' in IEEE Transactions on Magnetics, 41, (10), 2005, pp 2609 - 2611
Series/Report no.:
IEEE Transactions on Magnetics 41 10
Abstract:
Magnetic tunnel junctions (MTJs) with amorphous CoFeB and Co2MnSi electrodes were fabricated and examined. In the case of
[Co90Fe10]100 B , the = 32%boron addition reduces the magnetization by 30% compared to Co90Fe10, yet the reduction of the
tunnel magnetoresistance (TMR) is over 95%. On the contrary, in the case of Co(100 )Mn Si , although net magnetization is very
small at room temperature, the TMR can be as large as 7%. The character of each metalloid (boron and silicon) could be responsible
for the peculiar behavior to each system.
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