Magnetite Schottky barriers on GaAs substrates

Abstract

Thin films of HfO2 produced by pulsed-laser deposition on sapphire, yttria-stabilized zirconia, or silicon substrates show ferromagnetic magnetization curves with little hysteresis and extrapolated Curie temperatures far in excess of 400 K. The moment does not scale with film thickness, but in terms of substrate area it is typically in the range 150–400 μB nm−2. The magnetization exhibits a remarkable anisotropy, which depends on texture and substrate orientation. Pure HfO2 powder develops a weak magnetic moment on heating in vacuum, which is eliminated on annealing in oxygen. Lattice defects are the likely source of the magnetism.