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Title: Magnetite Schottky barriers on GaAs substrates
Sponsor: Science Foundation Ireland
Author's Homepage:
Keywords: Physics
Issue Date: 2005
Publisher: American Institute of Physics
Citation: S.M.Watts, C. Boothman, S. van Dijken & J.M.D. Coey 'Magnetite Schottky barriers on GaAs substrates' in Applied Physics Letters, 86, 2005, 212108
Series/Report no.: Applied Physics Letters
Abstract: Thin films of HfO2 produced by pulsed-laser deposition on sapphire, yttria-stabilized zirconia, or silicon substrates show ferromagnetic magnetization curves with little hysteresis and extrapolated Curie temperatures far in excess of 400 K. The moment does not scale with film thickness, but in terms of substrate area it is typically in the range 150–400 μB nm−2. The magnetization exhibits a remarkable anisotropy, which depends on texture and substrate orientation. Pure HfO2 powder develops a weak magnetic moment on heating in vacuum, which is eliminated on annealing in oxygen. Lattice defects are the likely source of the magnetism.
Description: PUBLISHED
Appears in Collections:Physics (Scholarly Publications)

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