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Title: Transport characteristics of magnetite thin films grown onto GaAs substrates
Sponsor: Science Foundation Ireland
Author's Homepage:
Keywords: Physics
Issue Date: 2004
Publisher: IEEE
Citation: Watts SM, Nakajima K, van Dijken S, Coey JMD 'Transport characteristics of magnetite thin films grown onto GaAs substrates' in Journal of Applied Physics, 95, (11), 2004, pp 7465 - 7467
Series/Report no.: Journal of Applied Physics
Abstract: Magnetite thin films with a preferred (111) orientation have been deposited by reactive dc magnetron sputtering from a pure Fe target onto (100) GaAs substrates at 400 °C. The films show a clear Verwey transition in both the magnetization and sheet resistance as functions of temperature. For films deposited onto semiconducting n-type GaAs substrates, we have obtained asymmetric current–voltage (I–V) characteristics with a Schottky diodelike behavior in forward bias. Activation energy plots of the I–V data as a function of temperature indicate a barrier height of 0.3–0.4 eV. This does not take into account the contribution from tunneling across the narrow depletion layer in these junctions, so should be considered a lower bound to the actual Schottky barrier height. Our work points to the potential integration of half-metallic magnetite with GaAs-based heterostructures for spin-electronic devices.
Description: PUBLISHED
Appears in Collections:Physics (Scholarly Publications)

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