A.L. Gurskii, Y.P. Rakovich, E.V. Lutsenko, A.A. Gladyshchuk, G.P. Yablonskii, H. Hamadeh and M.Heuken ‘Free exciton spectra in heteroepitaxial ZnSe/GaAs layers’ in Physical Review B, 61, (15), 2000, pp 10314 – 1032
Physical Review B 61 15
The free-exciton photoluminescence (PL) and reflection spectra of metal-organic vapor-phase-epitaxy grown ZnSe/GaAs epilayers with a thickness greater than that of the strain relaxation thickness were studied experimentally and theoretically for temperatures in the range T=10–120 K. Calculations were performed in the framework of absorbing and reflecting dead layer models, using single and two-oscillator models, both including and neglecting spatial dispersion. The results rule out the explanation that the fine structure in the free-exciton PL spectra derives from thermal strain splitting and polariton effects, if this structure is not accompanied by a corresponding structure in reflection. It was shown that this structure in the PL spectrum originates mainly from light interference caused by the presence of a dead layer in the near-surface region, with the thickness of the dead layer depending on the excitation intensity. A correlation between the measured and inherent free-exciton spectra was established.
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