Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities
Citation:
Folliot, H. and Lynch, M. and Bradley, A. L. and Dunbar, L. A. and Donegan, J. F. and Barry, L. P. and Roberts, J. S. and Hill, G., Two-photon absorption photocurrent enhancement in bulk AlGaAs semiconductor microcavities, Applied Physics Letters, 80, 2002, 1328-1330Download Item:
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Abstract:
We report on two-photon absorption ~TPA! photocurrent in semiconductor microcavities. We
experimentally show a substantial increase in the TPA photocurrent generated, at resonance, in a
GaAlAs/GaAs microcavity designed for TPA operation at ;890 nm. An enhancement factor of
;12 000 of the photocurrent is obtained via the microcavity effect, which could have an important
impact on the use of TPA devices for high speed switching and sampling applications. Our results
also show the implications of the cavity photon lifetime on autocorrelation traces measured using
TPA in semiconductor microcavities
Author's Homepage:
http://people.tcd.ie/bradlelhttp://people.tcd.ie/jdonegan
Description:
PUBLISHEDThis paper was selected for inclusion in the Virtual Journal of Nanoscale Science and Technology 5, 9 (2002).
Author: Bradley, Louise; Donegan, John
Type of material:
Journal ArticleCollections:
Series/Report no:
Applied Physics Letters80
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Full text availableKeywords:
semiconductor, two-photon absorptionDOI:
http://dx.doi.org/10.1063/1.1455694Licences: