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dc.contributor.authorBradley, Louise
dc.date.accessioned2020-07-30T16:11:59Z
dc.date.available2020-07-30T16:11:59Z
dc.date.issued2006
dc.date.submitted2006en
dc.identifier.citationO'Reilly, L., Natarajan, G., Lucas, O.F., McNally, P.J., Daniels, S., Mitra, A., Bradley, L., Cameron, D., Reader, A., Impact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type doping, Journal of Crystal Growth, 287, 2006, 1, 139 - 144en
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/93086
dc.descriptionPUBLISHEDen
dc.description.abstractγ-CuCl is a wide-band gap (Eg = 3.395eV at 4 K) , direct band gap, semiconductor material with a cubic zincblende lattice structure. A very large exciton binding energy (190 meV), assures efficient exciton-based emission at room temperature. Its lattice constant, means that the lattice mismatch to Si (aSi=0.543 nm) is <0.5%. γ-CuCl on Si—the growth of a wide-band gap, direct band gap, optoelectronics material on silicon substrate is a novel material system, with compatibility to current Si-based electronic/optoelectronics technologies. Both n-type and p-type CuCl will be required for development of homojunction light-emitting diodes (LEDs). The authors report on the impact of incorporation of Zn for n-type doping of CuCl by co-evaporation of CuCl and ZnCl2. Polycrystalline Zn-doped γ-CuCl thin films are grown on Si (1 1 1), Si (1 0 0), and glass substrates by physical vapour deposition. X-ray diffraction (XRD) studies confirm that this n-doped CuCl has a cubic zincblende structure with a preferred (1 1 1) orientation. Several excitonic bands are evident in low-temperature photoluminescence (PL) measurements such as the Z3 free exciton at ∼388 nm; I1-bound exciton at ∼392 nm and M free biexciton at ∼393 nm. Cathodoluminescence (CL) and PL reveal a strong room temperature Z3 excitonic emission at ∼385 nm. Electrical measurements indicate n-type conductivity with resistivity ∼34 Ωcm.en
dc.format.extent139en
dc.format.extent144en
dc.language.isoenen
dc.relation.ispartofseriesJ. Cryst. Growth;
dc.relation.ispartofseries287;
dc.relation.ispartofseries1;
dc.rightsYen
dc.subjectDopingen
dc.subjectX-ray diffractionen
dc.subjectCuClen
dc.subjectWide-band gap semiconductoren
dc.titleImpact on structural, optical and electrical properties of CuCl by incorporation of Zn for n-type dopingen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/bradlel
dc.identifier.rssinternalid39275
dc.identifier.doihttp://dx.doi.org/10.1016/j.jcrysgro.2005.10.057
dc.rights.ecaccessrightsopenAccess
dc.identifier.orcid_id0000-0002-9399-8628


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