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dc.contributor.authorBradley, Louise
dc.date.accessioned2020-07-30T12:24:06Z
dc.date.available2020-07-30T12:24:06Z
dc.date.issued2006
dc.date.submitted2006en
dc.identifier.citationLucas, O.F., O'Reilly, L., Natarajan, G., McNally, P.J., Daniels, S., Mitra, A., Bradley, L., Cameron, D., Reader, A., Encapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substrates, Journal of Crystal Growth, 2006, 287, 1, 112 - 117en
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/93084
dc.descriptionPUBLISHEDen
dc.description.abstractγ-CuCl semiconductor material has been identified as a candidate material for the fabrication of blue-UV optoelectronic devices on Si substrates due to its outstanding electronic, lattice and optical properties. However, CuCl thin films oxidise completely into oxyhalides of Cu II within a few days of exposure to air. Conventional encapsulation of thin γ-CuCl by sealed glass at a deposition/curing temperature greater than 250 °C cannot be used because CuCl interacts chemically with Si substrates when heated above that temperature. In this study we have investigated the behaviour of three candidate dielectric materials for use as protective layers for the heteroepitaxial growth of γ-CuCl on Si substrates: SiO2 deposited by plasma-enhanced chemical vapour deposition (PECVD), organic polysilsesquioxane-based spin on glass material (PSSQ) and cyclo olefin copolymer (COC) thermoplastic-based material. The optical properties (UV/Vis and IR) of the capped luminescent CuCl films were studied as a function of time, up to 28 days and compared with bare uncapped films. The results clearly show the efficiency of the protective layers. Both COC and the PSSQ layer prevented CuCl film from oxidising while SiO2 delayed the effect of oxidation. The dielectric constant of the three protective layers was evaluated at 1 MHz to be 2.3, 3.6 and 6.9 for C0C, SiO2 and PSSQ, respectively.en
dc.format.extent112en
dc.format.extent117en
dc.language.isoenen
dc.relation.ispartofseriesJ. Cryst. Growth;
dc.relation.ispartofseries287;
dc.relation.ispartofseries1;
dc.rightsYen
dc.subjectEncapsulationen
dc.subjectSemiconducting materialsen
dc.subjectBlue—UV optoelectronics light-emitting device on Sien
dc.titleEncapsulation of the heteroepitaxial growth of wide band gap γ-CuCl on silicon substratesen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/bradlel
dc.identifier.rssinternalid39272
dc.identifier.doihttp://dx.doi.org/10.1016/j.jcrysgro.2005.10.053
dc.rights.ecaccessrightsopenAccess
dc.identifier.orcid_id0000-0002-9399-8628


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