Ultrahigh conductivity in Weyl semimetal NbAs nanobelts
dc.contributor.author | Sanvito, Stefano | |
dc.contributor.author | Zhang, Cheng | |
dc.contributor.author | Ni, Zhuoliang | |
dc.contributor.author | Zhang, Jinglei | |
dc.contributor.author | Yuan, Xiang | |
dc.contributor.author | Liu, Yanwen | |
dc.contributor.author | Zou, Yichao | |
dc.contributor.author | Liao, Zhiming | |
dc.contributor.author | Du, Yongping | |
dc.contributor.author | Narayan, Awadhesh | |
dc.contributor.author | Zhang, Hongming | |
dc.contributor.author | Gu, Tiancheng | |
dc.contributor.author | Zhu, Xuesong | |
dc.contributor.author | Pi, Li | |
dc.contributor.author | Han, Xiaodong | |
dc.contributor.author | Zou, Jin | |
dc.contributor.author | Shi, Yi | |
dc.contributor.author | Wan, Xiangang | |
dc.contributor.author | Savrasov, Sergey Y. | |
dc.contributor.author | Xiu, Faxian | |
dc.date.accessioned | 2020-02-17T16:47:56Z | |
dc.date.available | 2020-02-17T16:47:56Z | |
dc.date.created | 2019 | en |
dc.date.issued | 2019 | |
dc.date.submitted | 2019 | en |
dc.identifier.citation | Zhang, C., Ni, Z., Zhang, J., Yuan, X., Liu, Y., Zou, Y., Liao, Z., Du, Y., Narayan, A., Zhang, H., Gu, T., Zhu, X., Pi, L., Sanvito, S., Han, X., Zou, J., Shi, Y., Wan, X., Savrasov, S.Y. & Xiu, F., Ultrahigh conductivity in Weyl semimetal NbAs nanobelts, Nature Materials, 18, 5, 2019, 482 - 488 | en |
dc.identifier.other | Y | |
dc.identifier.uri | https://www.nature.com/articles/s41563-019-0320-9 | |
dc.identifier.uri | http://hdl.handle.net/2262/91554 | |
dc.description | PUBLISHED | en |
dc.description.abstract | In two-dimensional (2D) systems, high mobility is typically achieved in low-carrier-density semiconductors and semimetals. Here, we discover that the nanobelts of Weyl semimetal NbAs maintain a high mobility even in the presence of a high sheet carrier density. We develop a growth scheme to synthesize single crystalline NbAs nanobelts with tunable Fermi levels. Owing to a large surface-to-bulk ratio, we argue that a 2D surface state gives rise to the high sheet carrier density, even though the bulk Fermi level is located near the Weyl nodes. A surface sheet conductance up to 5–100 S per □ is realized, exceeding that of conventional 2D electron gases, quasi-2D metal films, and topological insulator surface states. Corroborated by theory, we attribute the origin of the ultrahigh conductance to the disorder-tolerant Fermi arcs. The evidenced low-dissipation property of Fermi arcs has implications for both fundamental study and potential electronic applications. | en |
dc.format.extent | 482 | en |
dc.format.extent | 488 | en |
dc.language.iso | en | en |
dc.relation.ispartofseries | Nature Materials; | |
dc.relation.ispartofseries | 18; | |
dc.relation.ispartofseries | 5; | |
dc.rights | Y | en |
dc.subject | Two-dimensional systems | en |
dc.subject | Semiconductors | en |
dc.subject | Semimetals | en |
dc.subject | NbAs | en |
dc.title | Ultrahigh conductivity in Weyl semimetal NbAs nanobelts | en |
dc.type | Journal Article | en |
dc.type.supercollection | scholarly_publications | en |
dc.type.supercollection | refereed_publications | en |
dc.identifier.peoplefinderurl | http://people.tcd.ie/sanvitos | |
dc.identifier.rssinternalid | 204032 | |
dc.identifier.doi | http://dx.doi.org/10.1038/s41563-019-0320-9 | |
dc.rights.ecaccessrights | openAccess | |
dc.identifier.orcid_id | 0000-0002-0291-715X |
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