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dc.contributor.authorBradley, Louise
dc.contributor.authorRoycroft, Brendan
dc.contributor.authorAkhter, Mahbub
dc.contributor.authorMaaskant, Pleun
dc.contributor.authorCorbett, Brian
dc.contributor.authorShaw, Alan
dc.contributor.authorde Mierry, Phillipe
dc.contributor.authorPoisson, Marie-Antoinette
dc.date.accessioned2019-11-04T13:48:05Z
dc.date.available2019-11-04T13:48:05Z
dc.date.issued2004
dc.date.submitted2004en
dc.identifier.citationRoycroft, B., Akhter, M., Maaskant, P., Corbett, B., Shaw, A,. Bradley, L., de Mierry, P. & Poisson, M. Origin of power fluctuations in GaN resonant-cavity light-emitting diodes, Optics Express, 12, 5, 2004, 736 - 741en
dc.identifier.otherY
dc.identifier.urihttps://www.osapublishing.org/oe/abstract.cfm?uri=oe-12-5-736
dc.identifier.urihttp://hdl.handle.net/2262/89990
dc.descriptionPUBLISHEDen
dc.description.abstractResonant-cavity light-emitting diodes (RCLEDs) with multiple InGaN/GaN quantum wells have been grown on sapphire substrates. The emission was through the substrate, and the top contact consisted of a highly reflecting Pd/Ag metallization. The peak emission wavelength was measured to be 490 nm. Under constant current biasing, the intensity was observed to fluctuate irregularly accompanied by correlated variations in the voltage. To investigate this further, emission from the RCLED was focused through a GaAs wafer onto a Vidicon camera. This gave a series of infrared, near-field images, spectrally integrated over a wavelength range from 870 nm to 1.9 µm. Flashes from point sources on the RCLED surface were observed, indicating that short-lived, highly localized “hot spots” were being formed that generated pulses of thermal radiation. It is proposed that this phenomenon results from the migration of metal into nanopipes present in this material. The filled pipes form short circuits that subsequently fuse and are detected by bursts of infrared radiation that are recorded in real time.en
dc.format.extent736en
dc.format.extent741en
dc.language.isoenen
dc.relation.ispartofseriesOptics Express;
dc.relation.ispartofseries12;
dc.relation.ispartofseries5;
dc.rightsYen
dc.subjectSemiconductor materialsen
dc.subjectLight emitting diodesen
dc.subjectLaser materialsen
dc.titleOrigin of power fluctuations in GaN resonant-cavity light-emitting diodesen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/bradlel
dc.identifier.rssinternalid15137
dc.identifier.doihttps://doi.org/10.1364/OPEX.12.000736
dc.rights.ecaccessrightsopenAccess
dc.identifier.rssurihttp://www.opticsinfobase.org/DirectPDFAccess/EBBB2FD7-BDB9-137E-CA98D19905A78C39_79186.pdf?da=1&id=79186&seq=0&CFID=2624428&CFTOKEN=83624982
dc.identifier.orcid_id0000-0002-9399-8628


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