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dc.contributor.authorBoland, John
dc.contributor.authorMc Closkey, David
dc.contributor.authorNayayana, Prabhava
dc.date.accessioned2019-06-17T12:35:40Z
dc.date.available2019-06-17T12:35:40Z
dc.date.issued2018
dc.date.submitted2018en
dc.identifier.citationHossain, M; Kumar, GS; Prabhava, SNB; McCloskey, D; Acharya, S; Rao, KDM; Boland, JJ., Transparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applications, ACS NANO, 12, 5, 2018, 4727 - 4735en
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/88104
dc.descriptionPUBLISHEDen
dc.description.abstractOptically transparent photodetectors are crucial in next-generation optoelectronic applications including smart windows and transparent image sensors. Designing photodetectors with high transparency, photoresponsivity, and robust mechanical flexibility remains a significant challenge, as is managing the inevitable trade-off between high transparency and strong photoresponse. Here we report a scalable method to produce flexible crystalline Si nanostructured wire (NW) networks fabricated from silicon-on-insulator (SOI) with seamless junctions and highly responsive porous Si segments that combine to deliver exceptional performance. These networks show high transparency (∼92% at 550 nm), broadband photodetection (350 to 950 nm) with excellent responsivity (25 A/W), optical response time (0.58 ms), and mechanical flexibility (1000 cycles). Temperature-dependent photocurrent measurements indicate the presence of localized electronic states in the porous Si segments, which play a crucial role in light harvesting and photocarrier generation. The scalable low-cost approach based on SOI has the potential to deliver new classes of flexible optoelectronic devices, including next-generation photodetectors and solar cells.en
dc.format.extent4727en
dc.format.extent4735en
dc.language.isoenen
dc.relation.ispartofseriesACS NANO;
dc.relation.ispartofseries12;
dc.relation.ispartofseries5;
dc.rightsYen
dc.subjectSilicon nanostructured wire networken
dc.subjectPhotodetectoren
dc.subjectPorous siliconen
dc.titleTransparent, Flexible Silicon Nanostructured Wire Networks with Seamless Junctions for High-Performance Photodetector Applicationsen
dc.typeJournal Articleen
dc.contributor.sponsorEuropean Research Council (ERC)en
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/nayayanp
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jboland
dc.identifier.peoplefinderurlhttp://people.tcd.ie/dmcclosk
dc.identifier.rssinternalid189971
dc.identifier.doihttp://dx.doi.org/10.1021/acsnano.8b01387
dc.relation.ecprojectidinfo:eu-repo/grantAgreement/EC/FP7/321160
dc.rights.ecaccessrightsopenAccess
dc.contributor.sponsorGrantNumber321160en
dc.contributor.sponsorGrantNumber12/IA/1482en
dc.subject.TCDThemeNanoscience & Materialsen
dc.subject.TCDTagAMORPHOUS-SILICONen
dc.subject.TCDTagDEVICEen
dc.subject.TCDTagDOPED SILICONen
dc.subject.TCDTagFLEXIBLEen
dc.subject.TCDTagFlexible conducting deviceen
dc.subject.TCDTagFlexible deviceen
dc.subject.TCDTagJUNCTIONSen
dc.subject.TCDTagNANOCONTACTSen
dc.subject.TCDTagNANOSCALEen
dc.subject.TCDTagNANOSTRUCTURESen
dc.subject.TCDTagNANOWIRE FORMATIONen
dc.subject.TCDTagNANOWIRESen
dc.subject.TCDTagNanotechnologyen
dc.subject.TCDTagOptoelectronicsen
dc.subject.TCDTagPOROUS SILICONen
dc.subject.TCDTagSILICONen
dc.subject.TCDTagSILICON DETECTORSen
dc.subject.TCDTagSILICON-ON-INSULATORen
dc.subject.TCDTagSemiconductor optoelectronicsen
dc.subject.TCDTagTRANSPARENTen
dc.subject.TCDTagTransparent conducting deviceen
dc.subject.TCDTagTransparent deviceen
dc.subject.TCDTagnanoporesen
dc.subject.TCDTagnanowire networken
dc.subject.TCDTagphotodetectoren
dc.subject.TCDTagseamlessen
dc.subject.TCDTagseamless junctionen
dc.subject.TCDTagseamless nanowire junctionen
dc.subject.TCDTagseamless nanowire networken
dc.status.accessibleNen


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