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dc.contributor.authorBOLAND, JOHNen
dc.date.accessioned2017-11-01T16:05:36Z
dc.date.available2017-11-01T16:05:36Z
dc.date.issued2017en
dc.date.submitted2017en
dc.identifier.citationManning, Hugh G. and Biswas, Subhajit and Holmes, Justin D. and Boland, John J., Nonpolar Resistive Switching in Ag@TiO2 Core-Shell Nanowires, ACS Applied Materials \& Interfaces, 2017, nullen
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/81951
dc.descriptionPUBLISHEDen
dc.description.abstractNonpolar resistive switching (RS), a combination of bipolar and unipolar RS, is demonstrated for the first time in a single nanowire (NW) system. Exploiting Ag@TiO2 core–shell (CS) NWs synthesized by postgrowth shell formation, the switching mode is controlled by adjusting the current compliance effectively, tailoring the electrical polarity response. We demonstrate ON/OFF ratios of 105 and 107 for bipolar and unipolar modes, respectively. In the bipolar regime, retention times could be controlled up to 103 s, and in the unipolar mode, >106 s was recorded. We show how the unique dual-mode switching behavior is enabled by the defect-rich polycrystalline material structure of the TiO2 shell and the interaction between the Ag core and the Ag electrodes. These results provide a foundation for engineering nonpolar RS behaviors for memory storage and neuromorphic applications in CSNW structures.en
dc.format.extentnullen
dc.relation.ispartofseriesACS Applied Materials \& Interfacesen
dc.rightsYen
dc.subjectNano-wireen
dc.titleNonpolar Resistive Switching in Ag@TiO2 Core-Shell Nanowiresen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jbolanden
dc.identifier.rssinternalid179270en
dc.identifier.doihttp://dx.doi.org/10.1021/acsami.7b10666en
dc.rights.ecaccessrightsopenAccess


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