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dc.contributor.authorSHVETS, IGORen
dc.date.accessioned2017-03-07T15:22:10Z
dc.date.available2017-03-07T15:22:10Z
dc.date.issued2017en
dc.date.submitted2017en
dc.identifier.citationWu H.-C, Chaika A.N, Hsu M.-C, Huang T.-W, Abid M, Abid M, Aristov V.Y, Molodtsova O.V, Babenkov S.V, Niu Y, Murphy B.E, Krasnikov S.A, Lÿbben O, Liu H, Chun B.S, Janabi Y.T, Molotkov S.N, Shvets I.V, Lichtenstein A.I, Katsnelson M.I, Chang C.-R, Large positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in graphene, Nature Communications, 8, 2017, 14453-en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/79635
dc.descriptionPUBLISHEDen
dc.descriptionExport Date: 28 February 2017en
dc.description.abstractGraphene supports long spin lifetimes and long diffusion lengths at room temperature, making it highly promising for spintronics. However, making graphene magnetic remains a principal challenge despite the many proposed solutions. Among these, graphene with zig-zag edges and ripples are the most promising candidates, as zig-zag edges are predicted to host spin-polarized electronic states, and spin-orbit coupling can be induced by ripples. Here we investigate the magnetoresistance of graphene grown on technologically relevant SiC/Si(001) wafers, where inherent nanodomain boundaries sandwich zig-zag structures between adjacent ripples of large curvature. Localized states at the nanodomain boundaries result in an unprecedented positive in-plane magnetoresistance with a strong temperature dependence. Our work may offer a tantalizing way to add the spin degree of freedom to graphene.en
dc.description.sponsorshipThis work was supported by the Beijing Institute of Technology Research Fund Program for Young Scholars, Science Foundation Ireland (SFI; No. 12/IA/1264), the National Plan for Science and Technology of KSU (Nos NPST 1598-02, NPST 1466-02 and NPST 2529-02), the Russian Academy of Sciences, the Russian Foundation for Basic Research (projects 14-02-00949, 14-02-01234 and 17-02-01139), the Working Group ‘Physics on Accelerators and Reactors of Western Europe (except for CERN)’ of the Ministry of Education and Science of the Russian Federation, a Marie Curie IIF grant within the 7th European Community Framework Programme, the BMBF-Project No. 05K12GU2, PSP-Element No. U4606BMB1211 and under Grant No. MOST 104-2112-M002-007-MY3, Taiwan. We thank T. Chassagne, M. Zielinski and M. Portail (CRHEA-CNRS, Sophia Antipolis, France) for providing high-quality SiC samples, H. Xu for help with electrical characterization, C. Ó Coileáin for help with the manuscript and A. Zakharov for help with LEEM/micro-LEED characterization and fruitful discussions.en
dc.format.extent14453en
dc.relation.ispartofseriesNature Communicationsen
dc.relation.ispartofseries8en
dc.rightsYen
dc.subjectGrapheneen
dc.subject.lcshGrapheneen
dc.titleLarge positive in-plane magnetoresistance induced by localized states at nanodomain boundaries in grapheneen
dc.typeJournal Articleen
dc.contributor.sponsorScience Foundation Ireland (SFI)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/ivchvetsen
dc.identifier.rssinternalid153058en
dc.identifier.doihttp://dx.doi.org/10.1038/ncomms14453en
dc.rights.ecaccessrightsopenAccess
dc.contributor.sponsorGrantNumber12/IA/1264en
dc.identifier.rssurihttps://www.scopus.com/inward/record.uri?eid=2-s2.0-85012928733&doi=10.1038%2fncomms14453&partnerID=40&md5=fb810fae53dbf7a0ec3b1ef5c232bfc2en


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