"A single nanoscale junction with programmable multilevel memory"
Item Type:Journal Article
Citation:O'Kelly, C. Fairfield, J.A. Boland, J.J., "A single nanoscale junction with programmable multilevel memory", ACS Nano, 8, (11), 2014, p11724 - 11729
A Single Nanoscale Junction with Programmable Multilevel Memory - Curtis O'Kelly - ACS NANO Revised Submission.pdf (Published (author's copy) - Peer Reviewed) 1.040Mb
Nanoscale devices that are sensitive to measurement history enable memory applications, and memristors are currently under intense investigation for robustness and functionality. Here we de-scribe the fabrication and performance of a memristor-like device that is comprised of a single TiO2 nan-owire in contact with Au electrodes, demonstrating both high sensitivity to electrical stimuli and high levels of control. Through an electroforming process, a population of charged dopants is created at the interface between the wire and electrode that can be manipulated to demonstrate a range of device and memristor characteristics. In contrast to conventional two-terminal memristors, our device is essentially a diode that exhibits memristance in the forward bias direction. The device is easily reset to the off state by a single voltage pulse and can be incremented to provide a range of controllable conductance states in the forward direction. Electrochemical modification of the Schottky barrier at the electrodes is proposed as an underlying mechanism, and six-level memory operations are demonstrated on a single nanowire.
European Research Council (ERC)
Type of material:Journal Article
Series/Report no:ACS Nano;
Availability:Full text available
Subject (TCD):Nanoscience & Materials