Sublattice asymmetry of impurity doping in graphene: A review.
Item Type:Journal Article
Citation:Lawlor JA, Ferreira MS, Sublattice asymmetry of impurity doping in graphene: A review., Beilstein journal of nanotechnology, 5, 2014, 1210-7
Beilstein_J_Nanotechnol-05-1210.pdf (PDF) 807.9Kb
In this review we highlight recent theoretical and experimental work on sublattice asymmetric doping of impurities in graphene, with a focus on substitutional nitrogen dopants. It is well known that one current limitation of graphene in regards to its use in electronics is that in its ordinary state it exhibits no band gap. By doping one of its two sublattices preferentially it is possible to not only open such a gap, which can furthermore be tuned through control of the dopant concentration, but in theory produce quasi-ballistic transport of electrons in the undoped sublattice, both important qualities for any graphene device to be used competetively in future technology. We outline current experimental techniques for synthesis of such graphene monolayers and detail theoretical efforts to explain the mechanisms responsible for the effect, before suggesting future research directions in this nascent field.
Author: FERREIRA, MAURO
Type of material:Journal Article
Series/Report no:Beilstein journal of nanotechnology
Availability:Full text available