Sub-15nm silicon lines fabrication via PS-b-PDMS block copolymer lithography
Item Type:Journal Article
Citation:Rasappa, Sozaraj Schulte, Lars Borah, Dipu Morris, Michael A Ndoni, Sokol, Sub-15nm silicon lines fabrication via PS-b-PDMS block copolymer lithography, Journal of Nanomaterials, 2013, 2013, 14 -
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This paper describes the fabrication of nanodimensioned silicon structures on silicon wafers from thin films of a poly(styrene)-block-poly(dimethylsiloxane) (PS-b-PDMS) block copolymer (BCP) precursor self-assembling into cylindrical morphology in the bulk. The structure alignment of the PS-b-PDMS (33 k–17 k) was conditioned by applying solvent and solvothermal annealing techniques. BCP nanopatterns formed after the annealing process have been confirmed by scanning electron microscope (SEM) after removal of upper PDMS wetting layer by plasma etching. Silicon nanostructures were obtained by subsequent plasma etching to the underlying substrate by an anisotropic dry etching process. SEM images reveal the formation of silicon nanostructures, notably of sub-15 nm dimensions.
Author: MORRIS, MICHAEL
Publisher:Hindawi Publishing Corp.
Type of material:Journal Article
Series/Report no:Journal of Nanomaterials
Availability:Full text available