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dc.contributor.authorDUESBERG, GEORGen
dc.date.accessioned2014-10-13T12:16:19Z
dc.date.available2014-10-13T12:16:19Z
dc.date.issued2010en
dc.date.submitted2010en
dc.identifier.citationZhou, YB, Liao, ZM, Wang, YF, Duesberg, GS, Xu, J, Fu, QA, Wu, XS, Yu, DP, Ion irradiation induced structural and electrical transition in graphene, Journal of Chemical Physics, 133, 23, 2010, 234703-en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/71475
dc.descriptionPUBLISHEDen
dc.description.abstractThe relationship between the electrical properties and structure evolution of single layer graphene was studied by gradually introducing the gallium ion irradiation. Raman spectrums show a structural transition from nano-crystalline graphene to amorphous carbon as escalating the degree of disorder of the graphene sample, which is in correspondence with the electrical transition from a Boltzmann diffusion transport to a carrier hopping transport. The results show a controllable method to tune the properties of graphene.en
dc.format.extent234703en
dc.language.isoenen
dc.relation.ispartofseriesJournal of Chemical Physicsen
dc.relation.ispartofseries133en
dc.relation.ispartofseries23en
dc.rightsYen
dc.subjectPhysicsen
dc.titleIon irradiation induced structural and electrical transition in grapheneen
dc.typeJournal Articleen
dc.contributor.sponsorNational Science Foundation (NSF)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/duesbergen
dc.identifier.rssinternalid97361en
dc.identifier.doihttp://dx.doi.org/10.1063/1.3518979en
dc.rights.ecaccessrightsopenAccess
dc.contributor.sponsorGrantNumber10804002en


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