Show simple item record

dc.contributor.authorPEROVA, TANIAen
dc.date.accessioned2014-01-16T11:20:22Z
dc.date.available2014-01-16T11:20:22Z
dc.date.created26-28 Septemberen
dc.date.issued2013en
dc.date.submitted2013en
dc.identifier.citationT. S. Perova, S. A. Dyakov, J. Wasyluk, C.Q. Miao, and Y.-H. Xie, Influence of the buffer layer properties on the intensity of Raman scattering of graphene, Book of Abstracts, BIT s 3rd Annual World Congress of Nano Science & Technology 2013, Xi an, China, 26-28 September, 2013, 237 - 237en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/67836
dc.descriptionPUBLISHEDen
dc.descriptionXi an, Chinaen
dc.format.extent237en
dc.format.extent237en
dc.language.isoenen
dc.relation.urihttp://www.bitcongress.com/nano2013/en
dc.rightsYen
dc.subjectgrapheneen
dc.subjectRaman mappingen
dc.titleInfluence of the buffer layer properties on the intensity of Raman scattering of grapheneen
dc.title.alternativeBook of Abstractsen
dc.title.alternativeBIT s 3rd Annual World Congress of Nano Science & Technology - 2013en
dc.contributor.sponsorIrish Research Council for Science and Engineering Technology (IRCSET)en
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/perovaten
dc.identifier.rssinternalid90759en
dc.rights.ecaccessrightsOpenAccess
dc.contributor.sponsorGrantNumberIRCSET, Postgraduate Awarden
dc.relation.sourceConference websiteen
dc.relation.citesCitesen
dc.subject.TCDThemeNanoscience & Materialsen
dc.identifier.rssurihttp://www.bitcongress.com/nano2013/en
dc.relation.sourceurihttp://www.bitcongress.com/nano2013/en


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record