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dc.contributor.authorSHVETS, IGOR
dc.date.accessioned2013-11-18T11:55:49Z
dc.date.available2013-11-18T11:55:49Z
dc.date.issued2013
dc.date.submitted2013en
dc.identifier.citationIgor Shvets, Ultraviolet irradiation controlled memory effect in graphene field effect transistors, Small, 9, 13, 2013, 2240 - 2244en
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/67638
dc.descriptionPUBLISHEDen
dc.description.abstractSensitivity of graphene to its surroundings including adsorbates, trapped charges on the substrate, and photons may open an avenue for photon-controlled graphene memory devices via control of the charge transfer process. Here, we report that the hysteresis in conductance-gate voltage dependence of graphene field effect transistors on SiO2 substrate can be enlarged by ultraviolet irradiation in both air and vacuum. As the irradiation power increases the Fermi energy of graphene there is a continuous shift from p- to n-doping for the forward gate voltage sweep. The enhanced charge transfer between graphene and its surroundings induced by ultraviolet illumination proposed explains the experimental results well. Moreover, the memory effect is demonstrated by employing a gate voltage pulse to program/erase the memory elements. Our findings improve understanding of the charge transfer between graphene and its surroundings and also prompt a new type of graphene based memory device.en
dc.format.extent2240en
dc.format.extent2244en
dc.language.isoenen
dc.publisherSmallen
dc.relation.ispartofseriesSmall;
dc.relation.ispartofseries9;
dc.relation.ispartofseries13;
dc.rightsYen
dc.subjecthysteresisen
dc.subjectgrapheneen
dc.subjectfield-effect transistorsen
dc.subjecttrap statesen
dc.subjectphotoelectrical responsesen
dc.titleUltraviolet irradiation controlled memory effect in graphene field effect transistorsen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/ivchvets
dc.identifier.rssinternalid89447
dc.rights.ecaccessrightsOpenAccess


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