Ultraviolet irradiation controlled memory effect in graphene field effect transistors
Item Type:Journal Article
Citation:Igor Shvets, Ultraviolet irradiation controlled memory effect in graphene field effect transistors, Small, 9, 13, 2013, 2240 - 2244
Han-Chun-Ultraviolet irradiation controlled memory effect in graphene field effect transistors.docx (Published (author's copy) - Peer Reviewed) 90.01Kb
Sensitivity of graphene to its surroundings including adsorbates, trapped charges on the substrate, and photons may open an avenue for photon-controlled graphene memory devices via control of the charge transfer process. Here, we report that the hysteresis in conductance-gate voltage dependence of graphene field effect transistors on SiO2 substrate can be enlarged by ultraviolet irradiation in both air and vacuum. As the irradiation power increases the Fermi energy of graphene there is a continuous shift from p- to n-doping for the forward gate voltage sweep. The enhanced charge transfer between graphene and its surroundings induced by ultraviolet illumination proposed explains the experimental results well. Moreover, the memory effect is demonstrated by employing a gate voltage pulse to program/erase the memory elements. Our findings improve understanding of the charge transfer between graphene and its surroundings and also prompt a new type of graphene based memory device.
Author: SHVETS, IGOR
Type of material:Journal Article
Availability:Full text available