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dc.contributor.authorHEGARTY, JOHNen
dc.date.accessioned2010-03-11T14:40:50Z
dc.date.available2010-03-11T14:40:50Z
dc.date.issued1993en
dc.date.submitted1993en
dc.identifier.citationM. H. Moloney and J. Hegarty, L. Buydens and P. Demeester, R. Grey and J. Woodhead, Carrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wells, Applied Physics Letters, 62, 25, 1993, 3327 - 3329en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/38810
dc.descriptionPUBLISHEDen
dc.description.abstractThe etfect of strain, strain relief, and barrier design on the carrier lifetime in InGaAs/(Al)GaAs multiple-quantum-well samples is investigated. Carriers lifetimes are measured in samples with varying amount of strain, due to increasing indium concentration in the wells, as well as in samples subject to strain relief, with thick barriers and GaAs barriers. Lifetimes of the order of 0.5 ns are measured. The lifetime is sensitive to the presence of indium in the wells but remarkably insensitive to the indium concentration, the strain in the samples, and the barrier composition.en
dc.format.extent3327en
dc.format.extent3329en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries62en
dc.relation.ispartofseries25en
dc.rightsYen
dc.subjectPhysics
dc.titleCarrier lifetimes in strained InGaAs/(Al)GaAs multiple quantum wellsen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jhegartyen
dc.identifier.rssinternalid791en
dc.identifier.rssurihttp://dx.doi.org/10.1063/1.109060en


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