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dc.contributor.authorHEGARTY, JOHNen
dc.date.accessioned2010-03-10T14:34:00Z
dc.date.available2010-03-10T14:34:00Z
dc.date.issued1995en
dc.date.submitted1995en
dc.identifier.citationP. Uusimaa, K. Rakennus, A. Salokatve, M. Pessa, T. Aherne, J. P. Doran, J. O'Gorman, and J. Hegarty, Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry., Applied Physics Letters, 67, 1995, 2197 - 2199en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/38802
dc.descriptionPUBLISHEDen
dc.description.abstractIn situ optical reflectometry at the wavelength of 488 nm was employed to control the growth of MgZnSSe/ZnSSe Bragg mirror stacks for the blue-green spectral region. 10- and 20-period layer structures of MgZnSSe/ZnSSe were grown on GaAs ~100! epilayers by molecular beam epitaxy. A room-temperature peak reflectance of 86% was obtained for the 20-period structure at the central wavelength of 474 nm. The results show that, in general, in situ optical monitoring of growth is a viable and simple method for real-time layer thickness control of MgZnSSe/ZnSSe quarter-wave stacks.en
dc.description.sponsorshipThis work is carried out within the European ESPRIT Basic Research Project No. 8447 ~SMILES!. It was also supported, in part, by the Finnish national program EPIMATTER financed by the Academy of Finland and by Optronics Ireland, the Irish national initiative in optoelectronics.en
dc.format.extent2197en
dc.format.extent2199en
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries67en
dc.rightsYen
dc.subjectPhysics
dc.titleMolecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry.en
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jhegartyen
dc.identifier.rssinternalid843en
dc.identifier.rssurihttp://dx.doi.org/10.1063/1.115101en


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