Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry.
Item Type:Journal Article
Citation:P. Uusimaa, K. Rakennus, A. Salokatve, M. Pessa, T. Aherne, J. P. Doran, J. O'Gorman, and J. Hegarty, Molecular beam epitaxy growth of MgZnSSe/ZnSSe Bragg mirrors controlled by in situ optical reflectometry., Applied Physics Letters, 67, 1995, 2197 - 2199
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In situ optical reflectometry at the wavelength of 488 nm was employed to control the growth of MgZnSSe/ZnSSe Bragg mirror stacks for the blue-green spectral region. 10- and 20-period layer structures of MgZnSSe/ZnSSe were grown on GaAs ~100! epilayers by molecular beam epitaxy. A room-temperature peak reflectance of 86% was obtained for the 20-period structure at the central wavelength of 474 nm. The results show that, in general, in situ optical monitoring of growth is a viable and simple method for real-time layer thickness control of MgZnSSe/ZnSSe quarter-wave stacks.
Author: HEGARTY, JOHN
Type of material:Journal Article
Series/Report no:Applied Physics Letters
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