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dc.contributor.authorHEGARTY, JOHNen
dc.date.accessioned2010-03-10T13:29:11Z
dc.date.available2010-03-10T13:29:11Z
dc.date.issued1994en
dc.date.submitted1994en
dc.identifier.citationM. H. Moloney and J. Hegarty and L. Buydens and P. Demeester, Very low saturation densities in strained InGaAs/AlGaAs multiple quantum wells, Appled Physics Letters, 64, 8, 1994, 997, 999en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/38799
dc.descriptionPUBLISHEDen
dc.description.abstractThe saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained samples with indium concentrations of 10% `and 15%. Very low saturation densities, as low as 0.82X 1017 cmm3, are reported for the InGaAs/AlGaAs quantum wells with an indium concentration of 15%. The reduction in the saturation density is attributed to the change in the valence band density of states and the fact that these samples were designed to be fully strained. A novel method of measuring the absorption without antireflection coatings is described.en
dc.format.extent997en
dc.format.extent999en
dc.language.isoenen
dc.relation.ispartofseriesAppled Physics Lettersen
dc.relation.ispartofseries64en
dc.relation.ispartofseries8en
dc.rightsYen
dc.subjectPhysics
dc.titleVery low saturation densities in strained InGaAs/AlGaAs multiple quantum wellsen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jhegartyen
dc.identifier.rssinternalid889en


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