Very low saturation densities in strained InGaAs/AlGaAs multiple quantum wells
Citation:
M. H. Moloney and J. Hegarty and L. Buydens and P. Demeester, Very low saturation densities in strained InGaAs/AlGaAs multiple quantum wells, Appled Physics Letters, 64, 8, 1994, 997, 999Download Item:

Abstract:
The saturation of excitonic absorption in strained InGaAs/AlGaAs quantum wells is systematically
measured as a function of strain. By comparison with an unstrained GaAs/AlGaAs quantum well
sample a reduction by a factor of up to 9 in the saturation carrier density is observed in strained
samples with indium concentrations of 10% `and 15%. Very low saturation densities, as low as
0.82X 1017 cmm3, are reported for the InGaAs/AlGaAs quantum wells with an indium concentration
of 15%. The reduction in the saturation density is attributed to the change in the valence band
density of states and the fact that these samples were designed to be fully strained. A novel method
of measuring the absorption without antireflection coatings is described.
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http://people.tcd.ie/jhegartyDescription:
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Author: HEGARTY, JOHN
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Appled Physics Letters64
8
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