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dc.contributor.authorBradley, Louiseen
dc.contributor.authorHegarty, Johnen
dc.date.accessioned2010-02-26T15:13:05Z
dc.date.available2010-02-26T15:13:05Z
dc.date.issued1995en
dc.date.submitted1995en
dc.identifier.citationBrys, C.; Vermaerke, F.; Demeester, P.; van Daele, P.; Rakennus, K.; Salokatve, A.; Uusimaa, P.; Pessa, M.; Bradley, A. L.; Doran, J. P.; O'Gorman, J.; Hegarty, J., Epitaxial lift-off of ZnSe based II-VI structures, Applied Physics Letters, 66, 9, 1995, 1086 - 1088en
dc.identifier.otherYen
dc.identifier.urihttp://hdl.handle.net/2262/38426
dc.descriptionPUBLISHEDen
dc.description.abstractThe epitaxial lift-off technique is applied to II?VI based structures. Epilayers of 255 nm thickness containing quantum wells are lifted off their substrates and redeposited onto polyimide coated GaAs. The technique has also been applied to II?VI samples onto which dielectric films had been deposited. Photoluminescence measurements show that the material quality has not been degraded during the processing. The success of this technique with II?VI?s opens up many possibilities for the integration of these materials with metals and dielectrics in vertical structure devicesen
dc.description.sponsorshipThis work has been partially supported by the E. U. Esprit B. R. A. Project No. 8447-SMILES. One of the authors ~C.B.! thanks the IWT for financial support.en
dc.format.extent1086en
dc.format.extent1088en
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries66en
dc.relation.ispartofseries9en
dc.rightsYen
dc.subjectPhysics
dc.titleEpitaxial lift-off of ZnSe based II-VI structuresen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/bradlelen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jhegartyen
dc.identifier.rssinternalid35430en
dc.identifier.doihttps://doi.org/10.1063/1.113580en
dc.identifier.rssurihttp://dx.doi.org/10.1063/1.113580en
dc.identifier.orcid_id0000-0002-9399-8628en


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