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dc.contributor.authorMOORE, ALAN
dc.contributor.authorPEROVA, TANIA
dc.contributor.authorMC GILP, JOHN FINLAY
dc.date.accessioned2010-02-25T12:17:47Z
dc.date.available2010-02-25T12:17:47Z
dc.date.issued2000
dc.date.submitted2000en
dc.identifier.citationM. Nolan, T.S. Perova, R.A. Moore, C.E. Beitia, J.F. McGilp and H.S. Gamble, Spectroscopic Investigations of Borosilicate Glass and its Application as a Dopant Source for Shallow Junctions, Journal of the Electrochemical Society, 147, 8, 2000, 3100, 3105en
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/38306
dc.descriptionPUBLISHEDen
dc.description.abstractBorosilicate glass was investigated as a dopant source for proximity rapid thermal diffusion. A borosilicate gel was spun onto a silicon wafer and the layer was rapid thermally processed to convert it to a borosilicate glass. Fourier transform infrared spectroscopy, spectroscopic ellipsometry, and sheet resistance measurements were used to understand and subsequently optimise the conversion of the gel to a borosilicate glass. The optimum conversion step, which avoided any boron loss from the borosilicate glass layer, was a curing step of 900?C for 45 s. Secondary ion mass spectrometry was used to measure the boron dopant profile of a silicon wafer that was doped with the borosilicate glass layer. The wafer had a surface dopant concentration of 4.7 ? 1019 cm?3 and a junction depth of 65.5 nm. Junction diodes, which were fabricated using the glass layer as a dopant source, displayed excellent characteristics, with very low leakage currents and a near ideal forward slopeen
dc.format.extent3100en
dc.format.extent3105en
dc.format.extent286613 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherElectrochemical Societyen
dc.relation.ispartofseriesJournal of the Electrochemical Societyen
dc.relation.ispartofseries147en
dc.relation.ispartofseries8en
dc.rightsYen
dc.subjectElectronic & Electrical Engineering
dc.subjectElectronic & Electrical Engineering
dc.titleSpectroscopic Investigations of Borosilicate Glass and its Application as a Dopant Source for Shallow Junctionsen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/rmoore
dc.identifier.peoplefinderurlhttp://people.tcd.ie/perovat
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jmcgilp
dc.identifier.rssinternalid13738
dc.identifier.rssurihttp://dx.doi.org/10.1149/1.1393863en


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