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dc.contributor.authorHEGARTY, JOHN
dc.date.accessioned2010-02-15T13:25:55Z
dc.date.available2010-02-15T13:25:55Z
dc.date.issued1987
dc.date.submitted1987en
dc.identifier.citationTai, K. , Hegarty, J. , Tsang, W.T. , Observation of optical Stark effect in InGaAs/InP multiple quantum wells, Applied Physics Letters , 51, (3), 1987, p152 - 154en
dc.identifier.otherY
dc.identifier.urihttp://hdl.handle.net/2262/37806
dc.descriptionPUBLISHEDen
dc.description.abstractWe report an experimental observation of a blue shift in the n=1 heavy-hole exciton line of In0.53Ga0.47As/InP multiple quantum wells resulting from a picosecond photoexcitation in the transparent spectral region. The temporal response of this shift follows the excitation and it is attributed to the optical Stark effect. The shift was measured to be 0.19 meV for an incident light with a photon energy 20 meV below the exciton peak and with a 10-MW/cm2 intensity.en
dc.format.extent152en
dc.format.extent154en
dc.format.extent368276 bytes
dc.format.mimetypeapplication/pdf
dc.language.isoenen
dc.publisherAmerican Institute of Physcisen
dc.relation.ispartofseriesApplied Physics Lettersen
dc.relation.ispartofseries51en
dc.relation.ispartofseries3en
dc.rightsYen
dc.subjectStark effecten
dc.subjectsemiconductoren
dc.titleObservation of optical Stark effect in InGaAs/InP multiple quantum wellsen
dc.typeJournal Articleen
dc.type.supercollectionscholarly_publicationsen
dc.type.supercollectionrefereed_publicationsen
dc.identifier.peoplefinderurlhttp://people.tcd.ie/jhegarty
dc.identifier.rssinternalid848
dc.identifier.rssurihttp://dx.doi.org/10.1063/1.98905en


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